Semiconductor physics
نویسندگان
چکیده
منابع مشابه
Condensed Matter Physics Semiconductor Spin Qubits
Meanwhile, a number of algorithms that could be run efficiently on quantum computers, but not on classical computers have been discovered, thereby increasing demand. The challenges are high: computers will need thousands of qubits (the quantum analog of a bit) and computational error rates of at most about one percent to perform effective quantum algorithms — a scaling of several orders of magn...
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• Demonstration of an enhancement in the modulation bandwidth from 16 GHz to 28 GHz in an injection locked semiconductor laser with a coincident reduction in parasitic chirp. • Demonstration of room-temperature, continuous-wave operation of the first bipolar cascade laser. This laser demonstrated an internal efficiency of 150% and a measured external modulation efficiency of 99.3%. Continuous-w...
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The activities carried out by Italian physicists in the field of semiconductor physics during the period spanning from 1945 to the foundation of the National Group of Structure of the Matter (GNSM, 1965) are reviewed within their historical context. Until the fifties, the Italian research was only marginally involved, if at all, in the main streams of advancement in solid state physics. Startin...
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This introductory chapter is mainly addressed to readers new to the field. In Sect. 1.1 a brief review of the historical roots of the current research is given. Section 1.2 describes various spin interactions. Section 1.3 is a mini text-book on semiconductor physics designed for beginners. A short overview of spin phenomena in semiconductors is given in Sect. 1.4. Finally, Sect. 1.5 presents th...
متن کاملReliability physics of compound semiconductor transistors for microwave applications
This paper reviews the reliability problems of compound semiconductor transistors for microwave applications. These devices suer from speci®c failure mechanisms, which are related to their limited maturity, with the exception of the GaAs MESFETs, which exhibit a stable technology and an assessed reliability. The metallizations employed in high electron mobility transistors (HEMTs) already bene...
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ژورنال
عنوان ژورنال: Nature
سال: 1980
ISSN: 0028-0836,1476-4687
DOI: 10.1038/283799a0